Ferrite Beads Design to Improve Turn-Off Characteristics of Cascode GaN HEMTs: An Optimum Design Method

In this article, an optimum ferrite beads design method is proposed to suppress the self-sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors (GaN HEMTs). At first, impacts gate loop and power on GaN HEMTs are analyzed. The analysis reveals weak damping effect oscillation. Next, analytical that can achieve maximum effective introduce extra stray inductance in loop, which induce high-voltage overshoot. To tackle problem, proposed, so while mitigating voltage accuracy model validated by experimental data end.